How many questions are there in this paper?

There are 150 items (questions) in this paper.

What type of questions are asked in this paper?

The paper consists of objective type questions.

Is there any penalty for wrong answers?

Yes, there is a penalty for wrong answers. One-third (0.33) of the marks assigned to the question will be deducted for each wrong answer.

What happens if more than one answer is marked for a question?

If more than one answer is marked, it will be treated as a wrong answer, and the same penalty will apply.

Is there any penalty for leaving a question blank?

No, there is no penalty for leaving a question blank.

Where can I download the ESE 2018 Electronics and Telecommunication Engineering question paper?

You can typically find and download the official ESE 2018 Electronics and Telecommunication Engineering question paper from UPSC's official website or reputable educational portals that archive previous year papers.

Engineering Services Exam 2018 Electronics & Telecommunication Paper PDF

Name: Engineering Services Exam 2018 Electronics & Telecommunication Paper PDF
Creator: UPSC
Keywords: Engineering Services Examination 2018, ESE 2018, Electronics and Telecommunication Engineering Paper, UPSC ESE Question Paper, ESE 2018 PDF, Engineering Services Exam, ESE Electronics, ESE Telecommunication, UPSC Engineering Services, ESE Previous Year Paper, 2018 ESE Paper, Electronics Engineering Exam, Telecommunication Engineering Exam, Objective Questions ESE, ESE Exam Pattern

Central Government Jobs Engineer 2018

Year 2018
Conducted By UPSC
Questions 150
Maximum Marks 300
Duration Three Hours

Exam Details

Detail	Information
Examination	ENGINEERING SERVICES EXAMINATION
Year	2018
Conducting Body	UPSC
Paper	Electronics and Telecommunication Engineering Paper
Subject	Electronics and Telecommunication Engineering
Duration	Three Hours
Maximum Marks	300
Number of Questions	150
Question Type	Objective (MCQ)

This is the official question paper for the Engineering Services Examination (ESE) 2018, conducted by UPSC, for the Electronics and Telecommunication Engineering paper. The exam allows three hours to answer 150 objective questions, with a maximum of 300 marks. This paper is a crucial resource for aspirants preparing for the ESE, providing insights into the exam pattern, question types, and difficulty level. Studying previous year papers like this one helps candidates identify key topics and strengthen their preparation strategy for the competitive examination.

Major Topics Covered

Electronics
Telecommunication Engineering
Semiconductor Devices
Junctions
Barrier Potential
Silicon Devices
Germanium Devices
Resistivity
Energy Gap
Intrinsic Concentration
High-Power Applications
JFET
Pinch-off Voltage
Tunnel Diode
Fermi Level
Valence Band
Conduction Band
Transistor Parameters
Beta (β)
Alpha (α)

Why This Paper is Important

Useful for ENGINEERING SERVICES EXAMINATION preparation
Helps understand the latest exam pattern
Useful for practice and self-assessment
Covers frequently asked General Studies topics
Helpful for analysing question trends

Related Resources

ESE 2018 Electronics and Telecommunication Engineering Answer Key
ESE 2018 Electronics and Telecommunication Engineering Syllabus
ESE 2018 Exam Pattern
ESE 2017 Electronics and Telecommunication Engineering Paper
ESE 2018 Electronics and Telecommunication Engineering Answer Key
ESE Electronics and Telecommunication Engineering Syllabus
ESE Exam Pattern
ESE 2019

Instructions

IMMEDIATELY AFTER THE COMMENCEMENT OF THE EXAMINATION, YOU SHOULD CHECK THAT THIS TEST BOOKLET DOES NOT HAVE ANY UNPRINTED OR TORN OR MISSING PAGES OR ITEMS, ETC.
IF SO, GET IT REPLACED BY A COMPLETE TEST BOOKLET.
Please note that it is the candidate's responsibility to encode and fill in the Roll Number and Test Booklet Series A, B, C or D carefully and without any omission or discrepancy at the appropriate places in the OMR Answer Sheet.
Any omission/discrepancy will render the Answer Sheet liable for rejection.
You have to enter your Roll Number on the Test Booklet in the Box provided alongside.
DO NOT write anything else on the Test Booklet.
This Test Booklet contains 150 items (questions).
Each item comprises four responses (answers).
You will select the response which you want to mark on the Answer Sheet.
In case you feel that there is more than one correct response, mark the response which you consider the best.
In any case, choose ONLY ONE response for each item.
You have to mark your responses ONLY on the separate Answer Sheet provided. See directions in the Answer Sheet.
Before you proceed to mark in the Answer Sheet the response to various items in the Test Booklet, you have to fill in some particulars in the Answer Sheet as per instructions sent to you with your Admission Certificate.
After you have completed filling in all your responses on the Answer Sheet and the examination has concluded, you should hand over to the Invigilator only the Answer Sheet.
You are permitted to take away with you the Test Booklet.
Sheets for rough work are appended in the Test Booklet at the end.
Penalty for wrong answers : THERE WILL BE PENALTY FOR WRONG ANSWERS MARKED BY A CANDIDATE.

Questions (page 2)

Q1. Consider the following statements regarding the formation of P-N junctions:

(1) Holes diffuse across the junction from P-side to N-side.
(2) The depletion layer is wiped out.
(3) There is continuous flow of current across the junction.
(4) A barrier potential is set up across the junction.
(a) 1 and 3
(b) 2 and 3
(c) 1 and 4
(d) 2 and 4

Q2. Silicon devices can be employed for a higher temperature limit (190 °C to 200 °C) as compared to germanium devices (85 °C to 100 °C). With respect to this, which of the following are incorrect?

(1) Higher resistivity of silicon
(2) Higher gap energy of silicon
(3) Lower intrinsic concentration of silicon
(4) Use of silicon devices in high-power applications
(a) 1, 2 and 4
(b) 1, 2 and 3
(c) 1, 3 and 4
(d) 2, 3 and 4

Q3. For an n-channel silicon JFET with channel length a = 2 × 10^-4 cm and channel resistivity \rho = 5 \Omega-cm, μ_n = 1300 cm²/V-s and \epsilon₀ = 9 × 10^-12 F/m, the pinch-off voltage, V_p, is nearly

(a) 2.30 V
(b) 2.85 V
(c) 3.25 V
(d) 3.90 V

Q4. In tunnel diode, the Fermi level lies

(a) inside valence band of p-type and inside conduction band of n-type semiconductors
(b) in the energy band gap but closer to conduction band of n-type semiconductors
(c) in the energy band gap but closer to valence band of p-type semiconductors
(d) in the energy band gap but above valence band of p-type and below conduction band of n-type semiconductors

Q5. The h_{FE} values in the specification sheet of a transistor are h_{FE(max)} = 225 and h_{FE(min)} = 64. What value of h_{FE} is to be adopted in practice?

(a) 64
(b) 100
(c) 120
(d) 225

Question paper preview

Scanned pages 1–2 for reference. Download the official PDF for the full paper.

ESE 2018 Electronics and Telecommunication Engineering question paper page 1 instructions scan PDF download UPSC — Page 1

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Frequently asked questions

What is the name of the exam?

The exam is the Engineering Services Examination (ESE).

Which year is this question paper from?

This question paper is from the year 2018.

Who conducts the Engineering Services Examination?

The Engineering Services Examination is conducted by UPSC (Union Public Service Commission).

What is the subject of this paper?

This paper is for Electronics and Telecommunication Engineering.

What is the maximum marks for this paper?

The maximum marks for this paper are 300.

What is the time duration allowed for the exam?

The time allowed for this paper is Three Hours.

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